The OptiMOS™ 5 series MOSFET (Metal Oxide) N-Channel FET type standard features a drain to source voltage (Vdss) of 80V and a continuous drain current (Id) of 40A (Tc) @ 25°C.

• Drain to Source Voltage (Vdss): 80V
• Continuous Drain Current (Id): 40A (Tc) @ 25°C
• Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
• Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
• Product Type: Discrete semiconductor products, specifically for transistors - FETs, MOSFETs - Single
• Package: 8-PowerTDFN
• Device Package: PG-TSDSON-8-FL
• Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 40 V
• Gate-Source Voltage (Vgs) (Max): ±20V
• Temperature Range: -55°C ~ 150°C (TJ)
• REACH: Unaffected
• Cross-Reference: CSD19533Q5ABSZ070N08LS5 and SP001352992