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BSZ076N06NS3GATMA1

Part No BSZ076N06NS3GATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 20A TSDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 35μA
Max Gate Charge 50nC @ 10V
Max Input Capacitance 4000pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Maximum Rds On at Id,Vgs 7.6 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerVDFN
Win Source Part Number 128099-BSZ076N06NS3GATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ076N06NS3GATMA1 CAD Model

Description

BSZ076N06NS3GATMA1

The BSZ076N06NS3GATMA1 is a high-performance N-channel MOSFET designed for dynamic power applications in modern electronics. This component ensures efficient switching, making it a vital choice for those looking to optimize performance in power circuits.

  • Applications: Power supplies, DC-DC converters, Motor drives
  • Features and Benefits: Low on-resistance, Fast switching, Enhanced thermal performance
  • Additional Details:
    • RDS(on): 7.6 mΩ
    • VGS(th): 1.8V min
    • Package: PG-TSDSON-8

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $11.4705 $57.3525
11+ $9.4117 $103.5287
17+ $9.1176 $154.9992
23+ $8.8235 $202.9405
30+ $8.5294 $255.8820
40+ $7.6470 $305.8800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 320 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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