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BSZ086P03NS3E G

Part No BSZ086P03NS3E G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 40A TSDSON-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type P
Technology MOSFET
Drain Source Voltage 30V
Current - Continuous Drain (Id) @ 25°C 13.5A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 3.1V @ 105μA
Gate Charge (Qg) (Maximum) @ Vgs 57.5nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 4785pF @ 15V
Vgs (Maximum) ±25V
Power Dissipation (Maximum) 2.1W (Ta), 69W (Tc)
Rds On (Maximum) @ Id, Vgs 8.6 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TSDSON-8
Package 8-PowerTDFN
Win Source Part Number 770440-BSZ086P03NS3E G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSZ086P03NS3E G CAD Model

Description

The MOSFET from Infineon Technologies is a high-performance power transistor.

  • Series: OptiMOS
  • Packaging: Reel
  • Mounting: Surface Mount Device (SMD)
  • Operating Temperature: -55°C to 150°C
  • Current Rating (Ta): 13.5A
  • Current Rating (Tc): 40A
  • Maximum Power Dissipation (Ta): 2.1W
  • Maximum Power Dissipation (Tc): 69W
  • Drain-Source Voltage: 30V
  • Gate-Source Voltage (Maximum): ±25V
  • Input Capacitance (Ciss): 4785pF @ 15V
  • Gate Charge (Qg): 57.5nC @ 10V
  • Rds On (Maximum) @ Id, Vgs: 8.6 mOhm @ 20A, 10V
  • Channel Type: P-channel
  • Drive Voltage (max Rds On, Min Rds On): 6V, 10V

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Pricing & Ordering

Quantity Unit Price Ext. Price
45+ $1.1880 $53.4600
90+ $1.1128 $100.1520
140+ $1.0752 $150.5280
200+ $1.0000 $200.0000
260+ $0.9625 $250.2500
325+ $0.9249 $300.5925
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,000 pieces
MOQ: 45 pcs
Order Increment : 1 pcs
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