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BSZ110N06NS3 G Real Image BSZ110N06NS3 G real image21538
Same model may have multiple batches, images only for reference.
BSZ110N06NS3 G Real Image BSZ110N06NS3 G real image21538
BSZ110N06NS3 G Real Image BSZ110N06NS3 G real image21538
Same model may have multiple batches, images only for reference.

BSZ110N06NS3 G

Part No BSZ110N06NS3 G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 20A TSDSON-8
Datasheet
BSZ110N06NS3 G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 23μA
Gate Charge (Qg) (Maximum) @ Vgs 33nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 2700pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 2.1W (Ta), 50W (Tc)
Rds On (Maximum) @ Id, Vgs 11 mOhm @ 20A, 10V
Operating Temperature Range -55°C ~ 150°C (TJ)
Mounting SMD
Manufacturer Package PG-TSDSON-8
Package 8-PowerVDFN
Win Source Part Number 770444-BSZ110N06NS3 G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian BSZ110N06NS3 G CAD Model

Description

The BSZ110N06NS3 G is a MOSFET manufactured by Infineon Technologies.

  • Series: OptiMOS
  • Current-Continuous Drain (Id): 20A (Tc)
  • Drive Voltage: 10V
  • Operating Temperature Range: -55°C to 150°C (TJ)
  • Package: PG-TSDSON-8
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
95+ $0.5312 $50.4640
230+ $0.4359 $100.2570
360+ $0.4223 $152.0280
490+ $0.4087 $200.2630
635+ $0.3950 $250.8250
850+ $0.3542 $301.0700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 55,055 pieces
MOQ: 95 pcs
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