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Same model may have multiple batches, images only for reference.
BSZ120P03NS3EGATMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

BSZ120P03NS3EGATMA1

Part No BSZ120P03NS3EGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET P-CH 30V 40A TSDSON-8
Datasheet
BSZ120P03NS3EGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Active
Polarity P-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 11A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.1V @ 73μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 3360pF @ 15V
Maximum Gate-Source Voltage ±25V
Power Dissipation (Max) 2.1W (Ta), 52W (Tc)
Maximum Rds On at Id,Vgs 12 mOhm @ 20A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TSDSON-8
Dimension 8-PowerTDFN
Win Source Part Number 1024563-BSZ120P03NS3EGATMA1
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian BSZ120P03NS3EGATMA1 CAD Model

Description

The Infineon Technologies BSZ120P03NS3EGATMA1 is a MOSFET with P-Channel polarity.

  • Polarity: P-Channel
  • Maximum Power Dissipation: 2.1W (Ta), 52W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Supply and Demand Status: Balanced
  • Applications: Power management and industrial applications

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