The BSZ240N12NS3G is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency synchronous rectification and other power management applications. This MOSFET utilizes advanced OptiMOS™ technology to achieve ultra-low on-resistance and optimized switching characteristics. These features enable significant reductions in power losses, resulting in improved system efficiency and thermal performance.

Applications

• Synchronous rectification in AC/DC power supplies
• DC/DC converters in server and telecom applications
• Motor control applications
• OR-ing MOSFETs
• Battery protection

Features

• N-channel, enhancement mode
• Ultra-low on-resistance (RDS(on))
• Optimized gate charge (Qg) for fast switching
• Avalanche rated
• 100% lead-free; RoHS compliant
• Logic Level

Benefits

• Significant reduction in power losses due to ultra-low RDS(on)
• Improved system efficiency and reduced operating temperatures
• Enhanced reliability and robustness due to avalanche rating
• Simplified gate drive circuitry due to logic level compatibility
• Environmentally friendly due to lead-free and RoHS compliance

Technical Specifications

The BSZ240N12NS3G features a drain-source voltage (VDS) of 120 V and a continuous drain current (ID) of 42 A (depending on mounting/cooling conditions). It has a typical on-resistance (RDS(on)) of 24 mΩ at VGS = 10 V. The total gate charge (Qg) is typically 28 nC. The device is packaged in a PG-TSDSON-8 package, offering excellent thermal performance and a compact footprint. The operating junction temperature range is -55 °C to +150 °C. This MOSFET is designed for high-frequency switching applications and is well-suited for applications requiring high efficiency and power density.

In summary, the BSZ240N12NS3G from Infineon is a high-performance N-channel MOSFET optimized for synchronous rectification and other power management applications. Its ultra-low on-resistance, fast switching speed, and avalanche rating make it an excellent choice for designs requiring high efficiency and reliability.