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BUZ30A H3045A

Part No BUZ30A H3045A
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description N-CHANNEL  POWER MOSFET
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 130mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1900 pF @ 25 V
Power Dissipation (Max) 125W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Standard Package 134 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 85595-BUZ30A H3045A
Ultra Librarian 3D Model Ultra Librarian BUZ30A H3045A CAD Model

Description

Overview

The BUZ30A H3045A is a high-performance power transistor designed for various electronic applications. Known for its robustness and efficiency, it is ideal for professionals seeking reliability in power management.

Features and Benefits

  • High voltage and current handling capability
  • Low saturation voltage for enhanced efficiency
  • High-speed switching capabilities
  • Robust and durable construction

Applications

  • Switching power supplies
  • Motor control systems
  • Power converters
  • Lighting control units

The BUZ30A H3045A offers extensive utility in projects that require dependable power regulation and is an excellent choice for engineers and hobbyists alike.

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