The BUZ311 is an N-Channel enhancement mode Power MOSFET manufactured by Infineon Technologies. It is designed for high-speed switching applications, offering a good balance between switching speed and on-state resistance. It is commonly used in various power electronic circuits.

Applications

• Switch-mode power supplies (SMPS)
• DC-DC converters
• Motor control circuits
• Solid-state relays
• Lighting control

Features

• N-Channel, enhancement mode: Easy to drive and control.
• Avalanche-rated: Rugged and reliable under transient conditions.
• Fast switching speeds: Reduces switching losses and improves efficiency.
• Low on-resistance (RDS(on)): Minimizes conduction losses.
• Pb-free (RoHS compliant): Environmentally friendly.

Benefits

• High efficiency in power conversion applications.
• Robust performance in demanding environments.
• Simplified circuit design due to easy gate drive requirements.
• Reduced heat dissipation due to low on-resistance.
• Environmentally compliant.

Technical Specifications

The BUZ311 has a drain-source voltage (VDS) of 100 V and a continuous drain current (ID) of 17 A. The on-resistance (RDS(on)) is typically 0.18 Ω. The gate threshold voltage (VGS(th)) is typically 3 V. The device is available in a TO-220 package. Consult the official Infineon datasheet for detailed electrical characteristics, thermal resistance, and package dimensions.