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BUZ31L

Part No BUZ31L
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 13.5A TO220-3
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series SIPMOS®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 13.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 200mOhm @ 7A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 25 V
Power Dissipation (Max) 95W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Standard Package 500 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 573763-BUZ31L
Ultra Librarian 3D Model Ultra Librarian BUZ31L CAD Model

Description

The 573763-BUZ31L is a N-Channel MOSFET transistor from Infineon Technologies.

  • Series: SIPMOS
  • Application: Discrete Semiconductor
  • Drain-to-Source Voltage: 200V
  • Continuous Drain Current: 13.5A
  • On-Resistance: 200mOhm @ 7A and 5V gate-source voltage
  • Threshold Voltage: 2V @ 1mA
  • Power Dissipation: 95W
  • Mounting: Through-hole
  • Package: TO-220-3
  • Input Capacitance: 1600pF @ 25V
  • Operating Temperature: -55°C to 150°C
  • Classification: EAR99
  • REACH: Not affected
  • Status: Obsolete
  • Moisture Sensitivity Level: 1

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Pricing & Ordering

Quantity Unit Price Ext. Price
110+ $0.5267 $57.9370
270+ $0.4320 $116.6400
415+ $0.4193 $174.0095
570+ $0.4054 $231.0780
740+ $0.3915 $289.7100
990+ $0.3511 $347.5890
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 41,000 pieces
MOQ: 110 pcs
Order Increment : 1 pcs
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