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Same model may have multiple batches, images only for reference.
BUZ32H3045AATMA1 Real Image
Same model may have multiple batches, images only for reference.

BUZ32H3045AATMA1

Part No BUZ32H3045AATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 200V 9.5A TO-263
Datasheet
BUZ32H3045AATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 200V
Continuous Drain Current at 25°C 9.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 1mA
Max Input Capacitance 530pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 75W (Tc)
Maximum Rds On at Id,Vgs 400 mOhm @ 6A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1025471-BUZ32H3045AATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian BUZ32H3045AATMA1 CAD Model

Description

This component's supply and demand status is sufficient.

  • Channel Type: N-Channel MOSFET
  • Drain-Source Breakdown Voltage: 200V
  • Continuous Drain Current @ 25°C: 9.5A (Tc)
  • Maximum Rds On @ Id,Vgs: 400 mOhm @ 6A, 10V
  • Package: PG-TO263-3
  • Mounting: SMD (SMT)
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supply and Demand Status: Sufficient

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