The BUZ73A H is an N-channel enhancement mode power MOSFET from Infineon Technologies, designed for high-speed switching applications. It is commonly used in switch-mode power supplies, DC-DC converters, and motor control circuits. Its robust design and high avalanche energy capability make it suitable for demanding industrial and automotive applications.

Applications

• Switch-Mode Power Supplies (SMPS)
• DC-DC Converters
• Motor Control Circuits
• Lighting Ballasts
• Uninterruptible Power Supplies (UPS)

Features

• N-Channel Enhancement Mode: Simplifies drive circuitry.
• High Switching Speed: Reduces switching losses and improves efficiency.
• Low On-Resistance (RDS(on)): Minimizes conduction losses.
• Avalanche Rated: Withstands high energy transients.
• Fully Isolated Package: Provides enhanced thermal performance and isolation.

Benefits

• Efficient Power Conversion: Low on-resistance and fast switching speed result in high efficiency.
• Robust Performance: Avalanche rating ensures reliability in demanding applications.
• Simplified Design: N-channel enhancement mode simplifies drive requirements.

Technical Specifications:

• Transistor Type: N-Channel MOSFET
• Drain-Source Voltage (VDS): 400V
• Gate-Source Voltage (VGS): ±20V
• Drain Current (ID): 4.4A
• On-Resistance (RDS(on)): 1.8 Ohms
• Gate Charge (Qg): 12 nC
• Power Dissipation (PD): 80W
• Operating Temperature: -55°C to +150°C
• Package: TO-220