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Same model may have multiple batches, images only for reference.
CY14B108L-ZS20XI Real Image
Same model may have multiple batches, images only for reference.

CY14B108L-ZS20XI

Part No CY14B108L-ZS20XI
Manufacturer Infineon Technologies
Catalog Memory
Description IC NVSRAM 8MBIT PAR 44TSOP II
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tray
Product Status Active
Programmable Not Verified
Memory Type Non-Volatile
Memory Format NVSRAM
Technology NVSRAM (Non-Volatile SRAM)
Memory Size 8Mbit
Memory Organization 1M x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 20ns
Access Time 20 ns
Voltage - Supply 2.7V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package 44-TSOP II
Base Product Number CY14B108
Standard Package 135 pcs
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2B
HTSUS 8542.32.0041
Win Source Part Number 581274-CY14B108L-ZS20XI
Ultra Librarian 3D Model Ultra Librarian CY14B108L-ZS20XI CAD Model

Description

The CY14B108L-ZS20XI is a non-volatile SRAM (NVSRAM) from Infineon Technologies.

  • Memory Size: 8Mbit
  • Voltage Range: 2.7V to 3.6V
  • Access Time: 20 ns
  • Package: 44-TSOP
  • Memory Interface: Parallel
  • Temperature Range: -40°C to 85°C
  • Programmable: Yes
  • Write Cycle Time: 20ns
  • Product Status: Active
  • REACH Regulations: Not affected

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