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Same model may have multiple batches, images only for reference.
CY7S1041GE30-10BVXIT Real Image
Same model may have multiple batches, images only for reference.

CY7S1041GE30-10BVXIT

Part No CY7S1041GE30-10BVXIT
Manufacturer Infineon Technologies
Catalog Memory
Description IC SRAM 4MBIT PARALLEL 48VFBGA / SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-VFBGA (6x8)
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs) - Memory - Memory
Mfr Infineon Technologies
Package Tape & Reel
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Asynchronous
Memory Size 4Mbit
Memory Organization 256K x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 10ns
Access Time 10 ns
Voltage - Supply 2.2V ~ 3.6V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-VFBGA (6x8)
Base Product Number CY7S1041
Standard Package 2,000
MSL Level 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Win Source Part Number 1347812-CY7S1041GE30-10BVXIT
Ultra Librarian 3D Model Ultra Librarian CY7S1041GE30-10BVXIT CAD Model

Description

The Infineon Technologies CY7S1041GE30-10BVXIT is a 4Mbit SRAM memory chip. Infineon Technologies is the manufacturer of the product.

  • Voltage Supply Range: 2.2V to 3.6V
  • Temperature Range: -40°C to 85°C
  • Package: Tape and Reel
  • Standard Package: 2,000
  • MSL Level: 3 (168 Hours)
  • REACH Status: Unaffected
  • Memory Organization: 256K x 16
  • Write Cycle Time: 10ns

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