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IAUZ30N06S5L140ATMA1

Part No IAUZ30N06S5L140ATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 30A (Tj)
Rds On (Max) @ Id, Vgs 14mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.2V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 12.2 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 888 pF @ 30 V
Power Dissipation (Max) 33W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting SMD (SMT)
Supplier Device Package PG-TSDSON-8-32
Package / Case 8-PowerTDFN
Base Product Number IAUZ30
Other Names 448-IAUZ30N06S5L140ATMA1CT,SP003244402,448-IAUZ30N06S5L140ATMA1TR,448-IAUZ30N06S5L140ATMA1DKR
Standard Package 5,000
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1278285-IAUZ30N06S5L140ATMA1
Ultra Librarian 3D Model Ultra Librarian IAUZ30N06S5L140ATMA1 CAD Model

Description

The IAUZ30N06S5L140ATMA1 is a N-channel MOSFET transistor from Infineon Technologies.

  • Drain to Source Voltage: 60 V
  • Continuous Drain Current: 30 A
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
  • Maximum Power Dissipation: 33 W
  • Package: 8-PowerTDFN package
  • Maximum Gate-Source Voltage: ±16V
  • Operating Temperature Range: -55°C to 175°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
35+ $1.6008 $56.0280
80+ $1.3135 $105.0800
120+ $1.2724 $152.6880
165+ $1.2314 $203.1810
215+ $1.1903 $255.9145
285+ $1.0672 $304.1520
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 22,730 pieces
MOQ: 35 pcs
Order Increment : 1 pcs
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