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Same model may have multiple batches, images only for reference.
IDH08S120 Real Image
Same model may have multiple batches, images only for reference.

IDH08S120

Part No IDH08S120
Manufacturer Infineon Technologies
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 1.2KV 7.5A TO220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr Infineon Technologies
Package Bulk
Product Status Active
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 7.5A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 7.5 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 180 µA @ 1200 V
Capacitance @ Vr, F 380pF @ 1V, 1MHz
Mounting Type Through Hole
Package / Case TO-220-2
Supplier Device Package PG-TO220-2
Operating Temperature - Junction -55°C ~ 175°C
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 601176-IDH08S120
Ultra Librarian 3D Model Ultra Librarian IDH08S120 CAD Model

Description

The IDH08S120 is a single silicon carbide (SiC) Schottky diode designed for rectification applications.

  • Maximum Reverse Voltage: 1200V
  • Average Rectified Current: 7.5A
  • Forward Voltage Drop: 1.8V @ 7.5A
  • Mounting Type: Through-Hole
  • Recovery Time: 0ns
  • Operating Temperature Range: -55°C to 175°C
  • Product Status: Active

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124+ $2.4354 $301.9896
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