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IGP03N120H2 Real Image
Same model may have multiple batches, images only for reference.

IGP03N120H2

Part No IGP03N120H2
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT, 9.6A, 1200V, N-CHANNEL
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Package Bulk
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 9.6 A
Current - Collector Pulsed (Icm) 9.9 A
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 3A
Power - Max 62.5 W
Switching Energy 290µJ
Input Type Standard
Gate Charge 22 nC
Td (on/off) @ 25°C 9.2ns/281ns
Test Condition 800V, 3A, 82Ohm, 15V
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package PG-TO220-3-1
Standard Package 1 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 602579-IGP03N120H2
Ultra Librarian 3D Model Ultra Librarian IGP03N120H2 CAD Model

Description

The IGP03N120H2 is a single IGBT (Insulated Gate Bipolar Transistor) designed for use in various electronic applications.

  • Maximum Power Rating: 62.5W
  • Voltage Breakdown: 1200V
  • Maximum Collector Current: 9.6A
  • Pulsed Current Rating: 9.9A
  • Vce(on) @ 15V and 3A: 2.8V
  • Switching Energy: 290µJ
  • Mounting: Through-hole
  • Package: TO-220-3
  • Operating Temperature Range: -40°C to 150°C
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
6+ $11.6760 $70.0560
14+ $9.5804 $134.1256
21+ $9.2816 $194.9136
29+ $8.9815 $260.4635
38+ $8.6827 $329.9426
50+ $7.7849 $389.2450
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 10,200 pieces
MOQ: 6 pcs
Order Increment : 1 pcs
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