The IGP20N60H3 is a single IGBT (Insulated Gate Bipolar Transistor) designed for high power applications.

• It features a TrenchStop™ technology, which provides high performance and reliability.
• With a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 40A, this IGBT can handle high power loads.
• It offers a low on-state voltage drop of 2.4V @ 15V and 20A, ensuring minimal power loss during operation.
• The IGP20N60H3 has a fast switching speed with a turn-on delay of 16ns and a turn-off delay of 194ns.
• It features a through-hole mounting type, making it easy to install in electronic circuits.
• This IGBT is suitable for a wide range of applications, including motor control, power supplies, and inverters.