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Same model may have multiple batches, images only for reference.
IXGH30N120B3 IXYS
Same model may have multiple batches, images only for reference.

IXGH30N120B3

Part No IXGH30N120B3
Manufacturer IXYS
Catalog IGBTs - Single
Description DISC IGBT PT-MID FREQUENCY TO-24
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr IXYS
Series GenX3™
Package Tube
Product Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 150 A
Vce(on) (Max) @ Vge, Ic 3.5V @ 15V, 30A
Power - Max 300 W
Switching Energy 3.47mJ (on), 2.16mJ (off)
Input Type Standard
Gate Charge 87 nC
Td (on/off) @ 25°C 16ns/127ns
Test Condition 960V, 30A, 5Ohm, 15V
Reverse Recovery Time (trr) 37 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247AD
Base Product Number IXGH30
Standard Package 30 pcs
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 608491-IXGH30N120B3
Ultra Librarian 3D Model Ultra Librarian IXGH30N120B3 CAD Model

Description

The IXGH30N120B3 is a single IGBT (Insulated Gate Bipolar Transistor) from the GenX3™ series by IXYS.

  • Maximum Power Rating: 300W
  • Voltage Collector-Emitter Breakdown: 1200V
  • Maximum Collector Current: 60A
  • Low On-State Voltage: 3.5V @ 15V gate-emitter voltage and 30A collector current
  • Turn-On Time: 16ns @ 25°C
  • Turn-Off Time: 127ns @ 25°C
  • Mounting: Through-hole
  • Package: TO-247-3
  • Operating Temperature Range: -55°C to 150°C
  • Status: Active product from IXYS

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