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IGW40N120H3 Real Image
Same model may have multiple batches, images only for reference.

IGW40N120H3

Part No IGW40N120H3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 1200V 80A 483W TO247-3
Datasheet
IGW40N120H3 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 80A
Pulsed Collector Current 160A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 40A
Maximum Power Dissipation 483W
Total Switching Energy(Ets) 3.16mJ
Input Type Standard
Gate Charge 185nC
Turn-on and Turn-off delay time 30ns/290ns
Testing Conditions 600V, 40A, 12 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045149-IGW40N120H3
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IGW40N120H3 CAD Model

Description

The Infineon Technologies 1045149-IGW40N120H3 is a Trench Field Stop IGBT transistor that has a maximum collector-emitter breakdown voltage of 1200V.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Maximum Current Collector: 80A
  • Maximum Power Dissipation: 483W
  • Mounting: Through Hole
  • Package: PG-TO247-3

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69+ $4.8806 $336.7614
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Availability: 6,500 pieces
MOQ: 8 pcs
Order Increment : 1 pcs
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