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IGW50N60TPXKSA1

Part No IGW50N60TPXKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 80A 319.2W TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 150A
Collector-emitter saturation voltage(Max) 1.8V @ 15V, 50A
Maximum Power Dissipation 319.2W
Total Switching Energy(Ets) 1.53mJ (on), 850μJ (off)
Input Type Standard
Gate Charge 249nC
Turn-on and Turn-off delay time 20ns/215ns
Testing Conditions 400V, 50A, 7 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 1045153-IGW50N60TPXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Quantity per package 240
Ultra Librarian 3D Model Ultra Librarian IGW50N60TPXKSA1 CAD Model

Description

The Infineon Technologies IGW50N60TPXKSA1 IGBT is a Trench Field Stop transistor with a VCEO maximum collector-emitter breakdown voltage of 600V, maximum current collector of 80A, and maximum power dissipation of 319.2W.

  • VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Current Collector: 80A
  • Maximum Power Dissipation: 319.2W
  • Gate Charge: 249nC
  • Operating Temperature: -40°C to 175°C (TJ)
  • Package: PG-TO247-3
  • Turn-On Delay Time: 20ns
  • Turn-Off Delay Time: 215ns
  • Collector-Emitter Saturation Voltage(Max): 1.8V @ 15V, 50A
  • Total Switching Energy(Ets): 1.53mJ (on), 850μJ (off)
  • Applications: Motor drives, power supplies, and inverters

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.3772 $59.4300
60+ $1.9506 $117.0360
92+ $1.8897 $173.8524
127+ $1.8288 $232.2576
164+ $1.7678 $289.9192
219+ $1.5849 $347.0931
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 68,500 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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