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IHW40N120R3

Part No IHW40N120R3
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description Reverse conducting IGBT with monolithic body diode
Sample
Rohs State rohs
ECAD Module
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Manufacturer Infineon Technologies
Win Source Part Number 1185340-IHW40N120R3
Manufacturer Homepage www.infineon.com
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IHW40N120R3 CAD Model

Description

The IHW40N120R3 is a discrete IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies. It's designed for efficient and reliable switching in a variety of power electronics applications, providing a good balance between conduction and switching losses.

Applications

  • Induction Heating Systems
  • Uninterruptible Power Supplies (UPS)
  • Welding Equipment
  • Renewable Energy Inverters (Solar, Wind)
  • General Purpose Inverters

Features

  • 1200V Blocking Voltage: Suitable for applications with high voltage requirements.
  • 40A Continuous Collector Current: Capable of handling significant current loads.
  • TRENCHSTOP™ Technology: Optimizes the trade-off between conduction and switching losses.
  • Soft Switching Behavior: Reduces EMI and voltage overshoot during switching.
  • Low VCE(sat): Minimizes conduction losses and improves efficiency.
  • Positive Temperature Coefficient: Facilitates easier paralleling for higher power applications.

Benefits

  • High Efficiency: Reduces energy consumption and heat dissipation.
  • Robust Performance: Designed for reliable operation in harsh environments.
  • Simplified Design: Reduces the complexity of drive circuitry.
  • Improved System Reliability: Minimizes the risk of device failure.
  • Lower System Cost: Reduces overall component count and cooling requirements.

Additional Details

The IHW40N120R3 leverages Infineon's TRENCHSTOP™ technology to minimize both conduction and switching losses, leading to higher overall efficiency. The soft switching behavior reduces electromagnetic interference (EMI) and voltage overshoot, simplifying system design and improving reliability. The low VCE(sat) characteristic further contributes to reduced conduction losses, optimizing energy conversion efficiency. The positive temperature coefficient enables safe and easy paralleling of multiple IGBTs for higher power applications. This IGBT is typically packaged in a TO-247 housing, offering good thermal performance and ease of mounting. Its robust design ensures reliable operation in demanding industrial environments, making it a suitable choice for various power electronics applications where efficiency and reliability are crucial.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $6.0075 $66.0825
27+ $4.9299 $133.1073
41+ $4.7760 $195.8160
56+ $4.6220 $258.8320
73+ $4.4681 $326.1713
97+ $4.0050 $388.4850
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,000 pieces
MOQ: 11 pcs
Order Increment : 1 pcs
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