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IHW40N60RF Infineon Technologies
Same model may have multiple batches, images only for reference.

IHW40N60RF

Part No IHW40N60RF
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 600V 80A 305W TO247-3
Datasheet
IHW40N60RF Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
IGBT Type Trench
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 80A
Pulsed Collector Current 120A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 40A
Maximum Power Dissipation 305W
Total Switching Energy(Ets) 560μJ (off)
Input Type Standard
Gate Charge 220nC
Turn-on and Turn-off delay time -/175ns
Testing Conditions 400V, 40A, 5.6 Ohm, 15V
Temperature Range - Operating -40°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO247-3
Win Source Part Number 142890-IHW40N60RF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IHW40N60RF CAD Model

Description

The Infineon Technologies 142890-IHW40N60RF is a Trench IGBT with a maximum collector-emitter breakdown voltage of 600V and a maximum collector current of 80A.

  • Maximum Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 80A
  • Gate Charge: 220nC
  • Collector-Emitter Saturation Voltage: 2.4V @ 15V and 40A
  • Total Switching Energy: 560μJ
  • Turn-On and Turn-Off Delay Times: - and 175ns respectively
  • Junction Temperature Range: -40°C to 175°C
  • Package: PG-TO247-3

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