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Same model may have multiple batches, images only for reference.
IKD10N60RC2ATMA1
Same model may have multiple batches, images only for reference.

IKD10N60RC2ATMA1

Part No IKD10N60RC2ATMA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IKD10N60RC2ATMA1
Datasheet
IKD10N60RC2ATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series TRENCHSTOP™
Package Tape & Reel
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 18.8 A
Current - Collector Pulsed (Icm) 30 A
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 10A
Power - Max 79 W
Switching Energy 320µJ (on), 170µJ (off)
Input Type Standard
Gate Charge 48 nC
Td (on/off) @ 25°C 14ns/250ns
Test Condition 400V, 10A, 49Ohm, 15V
Reverse Recovery Time (trr) 104 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package PG-TO252-3
Base Product Number IKD10N
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1376611-IKD10N60RC2ATMA1
Ultra Librarian 3D Model Ultra Librarian IKD10N60RC2ATMA1 CAD Model

Description

The IKD10N60RC2ATMA1 is an active single IGBT transistor manufactured by Infineon Technologies.

  • Series: TRENCHSTOP™
  • Package: Tape & Reel
  • Product Category: Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
  • Base Product Number: IKD10N
  • REACH: Not Affected
  • ECCN: EAR99
  • Operating Temperature: -40°C to 175°C
  • Maximum Collector Current: 18.8 A
  • Maximum Collector-Emitter Voltage Breakdown: 600 V

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