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IKD10N60RFATMA1

Name: IKD10N60RFATMA1
Brand: Infineon Technologies
SKU: 460414
Availability: InStock
Rating: 4.85 (5 reviews)

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Part No	IKD10N60RFATMA1
Manufacturer	Infineon Technologies
Catalog	IGBTs - Single
Description	IGBT 600V 20A 150W PG-TO252-3
Datasheet	IKD10N60RFATMA1 Datasheet
Sample
Rohs State
ECAD Module
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Products specifications Report Issue?

Categories	Discrete Semiconductor Products
Manufacturer	Infineon Technologies
Packaging	Reel - TR
Status	Active
IGBT Type	Trench Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage	600V
Maximum Current Collector	20A
Pulsed Collector Current	30A
Collector-emitter saturation voltage(Max)	2.5V @ 15V, 10A
Maximum Power Dissipation	150W
Total Switching Energy(Ets)	190μJ (on), 160μJ (off)
Input Type	Standard
Gate Charge	64nC
Turn-on and Turn-off delay time	12ns/168ns
Testing Conditions	400V, 10A, 26 Ohm, 15V
Reverse Recovery Time (trr)	72ns
Temperature Range - Operating	-40°C to 175°C (TJ)
Mounting	SMD (SMT)
Case / Package	PG-TO252-3
Win Source Part Number	1045271-IKD10N60RFATMA1
Popularity	Medium
Supply and Demand Status	Sufficient
Ultra Librarian 3D Model	Ultra Librarian IKD10N60RFATMA1 CAD Model

Alternative Products

Description

The Infineon Technologies IKD10N60RFATMA1 is an IGBT transistor used in a variety of applications.

Current Collector: 20A
Collector-Emitter Breakdown Voltage: 600V
Temperature Range: -40°C to 175°C
Maximum Power Dissipation: 150W
Popular choice due to: its balance of performance and affordability

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