The IKW50N65H5 is a high-speed switching IGBT (Insulated Gate Bipolar Transistor) from Infineon Technologies, part of their fifth-generation Highspeed 5 series. Designed for use in demanding power switching applications, this IGBT offers a combination of low conduction losses, fast switching speeds, and robust performance. It is particularly well-suited for applications requiring high efficiency and reliability.

Applications

• Induction Heating
• Welding Equipment
• Uninterruptible Power Supplies (UPS)
• Power Factor Correction (PFC)
• Solar Inverters

Features

• High-Speed Switching
• Low VCE(sat) (Collector-Emitter Saturation Voltage)
• TRENCHSTOP™ 5 Technology
• Robust Body Diode
• Temperature Protection

Benefits

• Improved Efficiency in Power Conversion
• Reduced Power Loss and Heat Generation
• Enhanced System Reliability
• Simplified Thermal Management
• Optimized for High-Frequency Switching

Technical Specifications

The IKW50N65H5 features a collector-emitter voltage (VCE) rating of 650V and a collector current (IC) rating that can vary depending on the specific operating conditions. The low VCE(sat) minimizes conduction losses, improving overall efficiency. The TRENCHSTOP™ 5 technology provides excellent switching performance and robustness. The integrated robust body diode enhances the device's ability to handle reverse currents. The integrated temperature sensor helps to protect against over-temperature conditions. Consult the datasheet for precise values of current, voltage, and switching characteristics.