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Same model may have multiple batches, images only for reference.
IKW75N65EL5XKSA1 Real Image
Same model may have multiple batches, images only for reference.

IKW75N65EL5XKSA1

Part No IKW75N65EL5XKSA1
Manufacturer Infineon Technologies
Catalog IGBTs - Single
Description IGBT 650V 75A FAST DIODE TO247-3 / IGBT 650 V 80 A 536 W Through Hole PG-TO247-3
Datasheet
IKW75N65EL5XKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr Infineon Technologies
Series TrenchStop™ 5
Package Tube
Product Status Active
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 1.35V @ 15V, 75A
Power - Max 536 W
Switching Energy 1.61mJ (on), 3.2mJ (off)
Input Type Standard
Gate Charge 436 nC
Td (on/off) @ 25°C 40ns/275ns
Test Condition 400V, 75A, 4Ohm, 15V
Reverse Recovery Time (trr) 114 ns
Temperature Range - Operating -40°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package PG-TO247-3
Base Product Number IKW75N65
Standard Package 30 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 874499-IKW75N65EL5XKSA1
Ultra Librarian 3D Model Ultra Librarian IKW75N65EL5XKSA1 CAD Model

Description

The IKW75N65EL5XKSA1 is a single IGBT transistor from the TrenchStop™ 5 series.

  • Category: Discrete Semiconductor Products - Transistors - IGBTs
  • Manufacturer: Infineon Technologies
  • Power: 536 W (Max)
  • Reverse Recovery Time (trr): 114 ns
  • Collector-Emitter Breakdown Voltage: 650 V (Max)
  • Collector Current: 80 A (Max)
  • Pulsed Current: 300 A
  • Vce(on): 1.35V @ 15V, 75A
  • Gate Charge: 436 nC
  • Turn-On Time: 40ns @ 25°C
  • Turn-Off Time: 275ns @ 25°C
  • Mounting: Through-Hole
  • Package: TO-247-3
  • Temperature Range: -40°C to 175°C
  • Status: Active

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