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Same model may have multiple batches, images only for reference.
IMBG120R140M1HXTMA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMBG120R140M1HXTMA1

Part No IMBG120R140M1HXTMA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SICFET N-CH 1.2KV 18A TO263
Datasheet
IMBG120R140M1HXTMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1203002-IMBG120R140M1HXTMA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products-Transistors FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Rds On (Max) @ Id, Vgs 189mOhm @ 6A, 18V
Supplier Device Package PG-TO263-7-12
Ultra Librarian 3D Model Ultra Librarian IMBG120R140M1HXTMA1 CAD Model

Description

The Infineon Technologies 1203002 is a high-performance N-Channel MOSFET transistor from the CoolSiC™ series.

  • Channel Type: N-Channel
  • Series: CoolSiC™
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Rds On (Max): 189mOhm @ 6A, 18V
  • Package Type: PG-TO263-7-12
  • Product Status: Active

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