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Same model may have multiple batches, images only for reference.
IMW120R040M1HXKSA1 Infineon Technologies
Same model may have multiple batches, images only for reference.

IMW120R040M1HXKSA1

Part No IMW120R040M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SIC DISCRETE
Datasheet
IMW120R040M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202931-IMW120R040M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Ultra Librarian 3D Model Ultra Librarian IMW120R040M1HXKSA1 CAD Model

Description

Features
• VDSS = 1200 V at Tvj = 25°C
• IDDC = 55 A at Tc = 25°C
• RDS(on) = 39 mΩ at VGS = 18 V, Tvj = 25°C
• Very low switching losses
• Short circuit withstand time 3 µs
• Benchmark gate threshold voltage, VGS(th) = 4.2 V
• Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
• Robust body diode for hard commutation
• .XT interconnection technology for best-in-class thermal performance

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Quantity Unit Price Ext. Price
4+ $16.1395 $64.5580
8+ $13.2427 $105.9416
12+ $12.8288 $153.9456
17+ $12.4150 $211.0550
21+ $12.0012 $252.0252
28+ $10.7597 $301.2716
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Availability: 130 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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