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Same model may have multiple batches, images only for reference.
IMW120R060M1HXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IMW120R060M1HXKSA1

Part No IMW120R060M1HXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1.2KV 36A TO247-3 / N-Channel 1200 V 36A (Tc) 150W (Tc) Through Hole PG-TO247-3-41
Datasheet
IMW120R060M1HXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id 5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs 31 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 1060 pF @ 800 V
Power Dissipation (Max) 150W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package PG-TO247-3-41
Case / Package TO-247-3
Base Product Number IMW120
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number SP001808368
Standard Package 30
Win Source Part Number 1324340-IMW120R060M1HXKSA1
Ultra Librarian 3D Model Ultra Librarian IMW120R060M1HXKSA1 CAD Model

Description

The Infineon Technologies IMW120R060M1HXKSA1 is a SiCFET (Silicon Carbide) transistor that is designed for use in discrete semiconductor products.

  • Win Source Part Number: 1324340-IMW120R060M1HXKSA1
  • Package: tube
  • Standard Package: 30
  • Mounting Type: through hole
  • Maximum Power Dissipation: 150W (Tc)
  • Drain to Source Voltage (Vdss): 1200V
  • Maximum Gate Charge (Qg): 31 nC @ 18 V
  • Maximum Input Capacitance (Ciss): 1060 pF @ 800 V

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