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IMW120R090M1HXKSA1

Part No IMW120R090M1HXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description SICFET N-CH 1.2KV 26A TO247-3 / N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-3-41
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id 5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V
Power Dissipation (Max) 115W (Tc)
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Through Hole
Supplier Device Package PG-TO247-3-41
Case / Package TO-247-3
Base Product Number IMW120
RoHS Status ROHS3 Compliant
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 2156-IMW120R090M1HXKSA1-448,SP001946164
Standard Package 30
Win Source Part Number 1325345-IMW120R090M1HXKSA1
Ultra Librarian 3D Model Ultra Librarian IMW120R090M1HXKSA1 CAD Model

Description

The IMW120R090M1HXKSA1 is a single N-channel SiCFET transistor from Infineon Technologies.

  • Mounting Type: Through-Hole
  • Packaging: Tube
  • Vdss: 1200 V
  • Id: 26A (Tc)
  • Rds On (Max) @ Id, Vgs: 117mOhm @ 8.5A, 18V
  • Qg (Max) @ Vgs: 21 nC @ 18 V
  • Ciss (Max) @ Vds: 707 pF @ 800 V
  • Temperature Range: -55°C ~ 175°C (TJ)
  • Power Dissipation (Max): 115W (Tc)

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.1881 $57.3167
15+ $6.7185 $100.7775
24+ $6.5085 $156.2040
32+ $6.2986 $201.5552
42+ $6.0886 $255.7212
55+ $5.4588 $300.2340
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 6,200 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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