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IMZA65R039M1HXKSA1

Part No IMZA65R039M1HXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description SILICON CARBIDE MOSFET, PG-TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1202805-IMZA65R039M1HXKSA1
Manufacturer Infineon Technologies
Category Discrete Semiconductor Products- Transistors- FETs, MOSFETs- Single FETs, MOSFETs
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 176W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Ultra Librarian 3D Model Ultra Librarian IMZA65R039M1HXKSA1 CAD Model

Description

The Infineon Technologies CoolSiC™ is a N-Channel SiCFET transistor.

  • Channel Type: N-Channel
  • Technology: SiCFET
  • Drain to Source Voltage (Vdss): 650V
  • Power Dissipation: 176W
  • Operating Temperature Range: -55°C to 175°C
  • Package: Tube
  • Product Status: Active

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