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IPA060N06N

Part No IPA060N06N
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V TO220-3
Datasheet
Sample
Rohs State rohs
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.3V @ 36μA
Max Gate Charge 32nC @ 10V
Max Input Capacitance 2500pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 6 mOhm @ 45A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 205211-IPA060N06N
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA060N06N CAD Model

Description

The Infineon Technologies 205211-IPA060N06N is an N-Channel MOSFET with a drain-source breakdown voltage of 60V and a continuous drain current of 45A @ 25°C. The device has a maximum power dissipation of 33W (Tc) and a maximum Rds On of 6 mOhm @ 45A, 10V. The gate-source threshold voltage is 3.3V @ 36μA and the maximum gate charge is 32nC @ 10V. The device has a maximum input capacitance of 2500pF @ 30V and a maximum gate-source voltage of ±20V. The device is packaged in a PG-TO220-FP case and is suitable for use in various applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.4971 $59.8840
95+ $1.2285 $116.7075
150+ $1.1901 $178.5150
205+ $1.1517 $236.0985
260+ $1.1133 $289.4580
350+ $0.9982 $349.3700
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 18,000 pieces
MOQ: 40 pcs
Order Increment : 1 pcs
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