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IPA100N08N3GXKSA1 Real Image1 IPA100N08N3GXKSA1 Real Image2
Same model may have multiple batches, images only for reference.
IPA100N08N3GXKSA1 Real Image1 IPA100N08N3GXKSA1 Real Image2
IPA100N08N3GXKSA1 Real Image1 IPA100N08N3GXKSA1 Real Image2
Same model may have multiple batches, images only for reference.

IPA100N08N3GXKSA1

Part No IPA100N08N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 80V 40A TO220-3
Datasheet
IPA100N08N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 80V
Continuous Drain Current at 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 46μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2410pF @ 40V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 35W (Tc)
Maximum Rds On at Id,Vgs 10 mOhm @ 40A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1045722-IPA100N08N3GXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPA100N08N3GXKSA1 CAD Model

Description

The Infineon Technologies IPA100N08N3GXKSA1 is an N-channel MOSFET transistor.

  • Maximum Power Dissipation: 35W @ Tc
  • Drain-Source Breakdown Voltage: 80V
  • Continuous Drain Current: 40A @ 25°C
  • Gate-Source Threshold Voltage: 3.5V @ 46μA
  • Maximum Gate Charge: 35nC @ 10V
  • Maximum Input Capacitance: 2410pF @ 40V
  • Package: PG-TO220-FP
  • Temperature Range: from -55°C to 175°C
  • Supply and Demand Status: sufficient
  • Suitable for: switching regulators, DC-DC converters, and motor control

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