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Same model may have multiple batches, images only for reference.
IPA126N10N3GXKSA1 Real Image
Same model may have multiple batches, images only for reference.

IPA126N10N3GXKSA1

Part No IPA126N10N3GXKSA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 35A TO220-FP
Datasheet
IPA126N10N3GXKSA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Not For New Designs
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Gate-Source Threshold Voltage 3.5V @ 45μA
Max Gate Charge 35nC @ 10V
Max Input Capacitance 2500pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 33W (Tc)
Maximum Rds On at Id,Vgs 12.6 mOhm @ 35A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package PG-TO220-FP
Dimension TO-220-3 Full Pack
Win Source Part Number 1045724-IPA126N10N3GXKSA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPA126N10N3GXKSA1 CAD Model

Description

The 1045724-IPA126N10N3GXKSA1 from Infineon Technologies is a N-Channel MOSFET transistor.

  • Drain-Source Breakdown Voltage: 100V
  • Continuous Drain Current: 35A (Tc)
  • Maximum Rds On: 12.6 mOhm @ 35A, 10V
  • Gate-Source Threshold Voltage: 3.5V @ 45μA
  • Package: PG-TO220-FP
  • Maximum Power Dissipation: 33W (Tc)
  • Operating Temperature Range: -55°C to 175°C (TJ)

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