The Infineon Technologies IPA60R099C6 is a N-channel MOSFET transistor that is designed to work in through-hole mounting. It has a maximum power dissipation of 35W and a drain-source breakdown voltage of 600V. The continuous drain current @ 25°C is 37.9A (Tc). The gate-source threshold voltage is 3.5V @ 1.21mA and the maximum gate charge is 119nC @ 10V. The maximum Rds On @ Id,Vgs is 99 mOhm @ 18.1A, 10V. This MOSFET transistor is part of the Discrete Semiconductor Products category and is popular in the market. It is an active component that operates in a temperature range of -55°C to 150°C (TJ). The packaging is done in tube/rail and the case/package is PG-TO-220-FP. The dimension of the product is TO-220-3 Full Pack.