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IPA60R280P7SXKSA1

Part No IPA60R280P7SXKSA1
Manufacturer Infineon Technologies
Catalog FETs - Single
Description MOSFET N-CHANNEL 600V 12A TO220
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Infineon Technologies
Packaging Tube
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) at 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 280mOhm at 3.8A, 10V
Vgs(th) (Maximum) at Id 4V at 190μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 761pF at 400V
Power Dissipation (Maximum) 24W (Tc)
Temperature Range - Operating -40°C ~ 150°C
Mounting Style Through Hole
Supplier Device Package PG-TO220 Full Pack
Manufacturer Package TO-220-3 Full Pack
Manufacturer Pack Quantity 50
MSL Level Not Applicable
Popularity High
Supply and Demand Status Balance
Win Source Part Number 802668-IPA60R280P7SXKSA1
Ultra Librarian 3D Model Ultra Librarian IPA60R280P7SXKSA1 CAD Model

Description

The IPA60R280P7SXKSA1 from Infineon Technologies is an N-channel MOSFET.

  • Drain to Source Voltage: 600V
  • Continuous Drain Current @ 25°C: 12A
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Power Dissipation: 24W (Tc)
  • On-Resistance: 280mOhm @ 3.8A, 10V
  • Gate Charge: 18nC @ 10V
  • Package: TO-220-3 Full Pack

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Pricing & Ordering

Quantity Unit Price Ext. Price
90+ $0.5779 $52.0110
185+ $0.5407 $100.0295
290+ $0.5220 $151.3800
415+ $0.4847 $201.1505
540+ $0.4661 $251.6940
675+ $0.4475 $302.0625
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 61,120 pieces
MOQ: 90 pcs
Order Increment : 1 pcs
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Shipping Information

Shipped from HK warehouse
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