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Same model may have multiple batches, images only for reference.
IPA65R190C7 Real Image
Same model may have multiple batches, images only for reference.

IPA65R190C7

Part No IPA65R190C7
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description IPA65R190 - 650V AND 700V COOLMO
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 290µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 400 V
Power Dissipation (Max) 30W (Tc)
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220 Full Pack
Package / Case TO-220-3 Full Pack
Standard Package 166 pcs
ECCN EAR99
HTSUS 8542.39.0001
Win Source Part Number 603307-IPA65R190C7
Ultra Librarian 3D Model Ultra Librarian IPA65R190C7 CAD Model

Description

The IPA65R190C7 is an N-channel MOSFET from the CoolMOS series.

  • Channel Type: N-Channel
  • Series: CoolMOS
  • Vdss: 650V
  • Id @ 25°C: 8A
  • Rds On (Max) @ 5.7A, 10V: 190mOhm
  • Mounting: Through-Hole
  • Package: TO-220-3 Full Pack
  • Qg @ 10V: 23 nC
  • Temperature Range: -55°C to 150°C
  • Manufacturer: Infineon Technologies

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Pricing & Ordering

Quantity Unit Price Ext. Price
21+ $2.4281 $50.9901
51+ $1.9923 $101.6073
78+ $1.9301 $150.5478
108+ $1.8678 $201.7224
139+ $1.8056 $250.9784
186+ $1.6188 $301.0968
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Availability: 3,958 pieces
MOQ: 21 pcs
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