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IPA65R660CFD

Part No IPA65R660CFD
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 650V 6A TO220
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 650V
Continuous Drain Current at 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 200μA
Max Gate Charge 22nC @ 10V
Max Input Capacitance 615pF @ 100V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 27.8W (Tc)
Maximum Rds On at Id,Vgs 660 mOhm @ 2.1A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package PG-TO220 Full Pack
Dimension TO-220-3 Full Pack
Win Source Part Number 068959-IPA65R660CFD
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPA65R660CFD CAD Model

Description

The Infineon Technologies IPA65R660CFD MOSFET is a N-Channel polarity power transistor that is suitable for use in a variety of applications.

  • Maximum Power Dissipation: 27.8W (Tc)
  • Continuous Drain Current: 6A (Tc) @ 25°C
  • Drain-Source Breakdown Voltage: 650V
  • Gate-Source Threshold Voltage: 4.5V @ 200μA
  • Maximum Rds On: 660 mOhm @ 2.1A, 10V
  • Package: PG-TO220 Full Pack
  • Dimension: TO-220-3 Full Pack
  • Status: active
  • Popularity: medium
  • Supply and Demand Status: limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
25+ $2.0560 $51.4000
60+ $1.6870 $101.2200
92+ $1.6343 $150.3556
127+ $1.5815 $200.8505
164+ $1.5288 $250.7232
219+ $1.3707 $300.1833
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 32,094 pieces
MOQ: 25 pcs
Order Increment : 1 pcs
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