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IPB014N06NATMA1

Part No IPB014N06NATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 34A TO263-7 / Trans MOSFET N-CH 60V 180A 7-Pin(6+Tab) D2PAK T/R
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Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 60V
Current - Continuous Drain (Id) @ 25°C 34A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Vgs(th) (Maximum) @ Id 2.8V @ 143μA
Gate Charge (Qg) (Maximum) @ Vgs 106nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 7800pF @ 30V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 3W (Ta), 214W (Tc)
Rds On (Maximum) @ Id, Vgs 1.4 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-7
Package TO-263-7, D2Pak (6 Leads + Tab)
Win Source Part Number 776842-IPB014N06NATMA1
Popularity Medium
Supply and Demand Status Limited
Family Name IPB014N06N
Introduction Date February 06, 2012
ECCN EAR99
Country of Origin Malaysia
Halogen Free Compliant
Estimated EOL Date 2028
Ultra Librarian 3D Model Ultra Librarian IPB014N06NATMA1 CAD Model

Description

The Infineon Technologies 776842-IPB014N06NATMA1 is a MOSFET transistor with a continuous drain current of 34A (Ta) and 180A (Tc).

  • Package: TO-263-7, D2Pak (6 Leads + Tab)
  • Mounting: SMD
  • Drain-Source Voltage: 60V
  • Gate-Source Threshold Voltage: 2.8V @ 143µA
  • Input Capacitance: 7800pF @ 30V (maximum)
  • Gate Charge: 106nC @ 10V
  • Operating Temperature: -55°C to 175°C
  • Series: OptiMOS
  • Compliance: Halogen-free

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Pricing & Ordering

Quantity Unit Price Ext. Price
7+ $8.3255 $58.2785
15+ $6.8312 $102.4680
23+ $6.6177 $152.2071
32+ $6.4043 $204.9376
41+ $6.1908 $253.8228
55+ $5.5504 $305.2720
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Availability: 35,000 pieces
MOQ: 7 pcs
Order Increment : 1 pcs
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