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Same model may have multiple batches, images only for reference.
IPB015N04N G Real Image
Same model may have multiple batches, images only for reference.

IPB015N04N G

Part No IPB015N04N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 120A TO263-3
Datasheet
IPB015N04N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Series OptiMOS
Packaging Reel package
Channel Type Type N
Technology MOSFET
Drain Source Voltage 40V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Maximum) @ Id 4V @ 200μA
Gate Charge (Qg) (Maximum) @ Vgs 250nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds 20000pF @ 20V
Vgs (Maximum) ±20V
Power Dissipation (Maximum) 250W (Tc)
Rds On (Maximum) @ Id, Vgs 1.5 mOhm @ 100A, 10V
Operating Temperature Range -55°C ~ 175°C (TJ)
Mounting SMD
Manufacturer Package PG-TO263-2
Package TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 759945-IPB015N04N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB015N04N G CAD Model

Description

The Infineon Technologies IPB015N04N G is a high-quality MOSFET manufactured by Infineon Technologies.

  • Series: OptiMOS
  • Reference Case: TO-263-3
  • Packaging: D2Pak
  • Maximum Power Dissipation: 250W
  • Maximum Rds On: 1.5 mOhm @ 100A, 10V
  • Supply and Demand Status: Limited

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Availability: 1,047 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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