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SISA12ADN-T1-GE3

Part No SISA12ADN-T1-GE3
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 30V 25A 1212-8
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Reel - TR
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 30V
Continuous Drain Current at 25°C 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2.2V @ 250μA
Max Gate Charge 45nC @ 10V
Max Input Capacitance 2070pF @ 15V
Maximum Gate-Source Voltage +20V, -16V
Power Dissipation (Max) 3.5W (Ta), 28W (Tc)
Maximum Rds On at Id,Vgs 4.3 mOhm @ 10A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package PowerPAK 1212-8
Dimension PowerPAK 1212-8
Win Source Part Number 110877-SISA12ADN-T1-GE3
Family Name SiSA12ADN
Introduction Date February 02, 2013
ECCN EAR99
Country of Origin China
Halogen Free Compliant
Estimated EOL Date 2026
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian SISA12ADN-T1-GE3 CAD Model

Description

The Vishay 110877-SISA12ADN-T1-GE3 is an N-channel MOSFET transistor that is designed to operate in a temperature range of -55°C to 150°C manufactured by Vishay.

  • Temperature Range: -55°C to 150°C
  • Maximum Power Dissipation: 3.5W (Ta), 28W (Tc)
  • Drain-Source Breakdown Voltage: 30V
  • Continuous Drain Current @ 25°C: 25A (Tc)
  • Maximum Rds On: 4.3 mOhm @ 10A, 10V
  • Suitable for: Power management, load switching, and battery protection
  • Package: PowerPAK 1212-8
  • Estimated EOL Date: 2026

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Pricing & Ordering

Quantity Unit Price Ext. Price
155+ $0.3230 $50.0650
380+ $0.2651 $100.7380
585+ $0.2568 $150.2280
805+ $0.2485 $200.0425
1,045+ $0.2402 $251.0090
1,395+ $0.2154 $300.4830
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 227,700 pieces
MOQ: 155 pcs
Order Increment : 1 pcs
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