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Same model may have multiple batches, images only for reference.
IPB039N04LG Real Image
Same model may have multiple batches, images only for reference.

IPB039N04LG

Part No IPB039N04LG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description Mosfet N-ch 40V 80A TO263-3
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Mounting SMD (SMT)
Case / Package TO-263
Continuous Drain Current (ID) 80 A
Drain to Source Breakdown Voltage 40 V
Drain to Source Resistance 3.9 mΩ
Drain to Source Voltage (Vdss) 40 V
Element Configuration Single
Fall Time 6 ns
Gate to Source Voltage (Vgs) 20 V
Input Capacitance 6.1 nF
Maximum Operating Temperature 175 °C
Max Power Dissipation 94 W
Min Operating Temperature -55 °C
Mount Surface Mount
Number of Pins 3
Power Dissipation 94 W
Radiation Hardening No
Rds On Max 3.9 mΩ
REACH SVHC No SVHC
Rise Time 5.4 ns
RoHS Compliant
Threshold Voltage 1.2 V
Turn-Off Delay Time 38 ns
Turn-On Delay Time 10 ns
Win Source Part Number 1065206-IPB039N04LG
Categories Transistors - FETs, MOSFETs - RF
Manufacturer Infineon Technologies
Popularity Low
Supply and Demand Status Shortage
Ultra Librarian 3D Model Ultra Librarian IPB039N04LG CAD Model

Description

The Infineon Technologies 1065206-IPB039N04LG is a low popularity electronic component that belongs to the category of Transistors - FETs, MOSFETs - RF.

  • FET Type: Single FET
  • Drain to Source Voltage (Vdss): 40 V.
  • Supply and Demand Status: Shortage
  • RoHS Compliant: Yes

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