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Same model may have multiple batches, images only for reference.
IPB05CN10NG Real Image
Same model may have multiple batches, images only for reference.

IPB05CN10NG

Part No IPB05CN10NG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 100V 100A TO263-3
Datasheet
IPB05CN10NG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 100V
Continuous Drain Current at 25°C 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 250μA
Max Gate Charge 181nC @ 10V
Max Input Capacitance 12000pF @ 50V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 300W (Tc)
Maximum Rds On at Id,Vgs 5.1 mOhm @ 100A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068964-IPB05CN10NG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB05CN10NG CAD Model

Description

The Infineon Technologies 068964-IPB05CN10NG is an N-channel MOSFET with a maximum drain-source breakdown voltage of 100V.

  • Popularity Rating: medium
  • Status: obsolete (EOL)
  • Maximum Power Dissipation: 300W @ Tc
  • Maximum Gate Charge: 181nC @ 10V
  • Maximum Input Capacitance: 12000pF @ 50V
  • Maximum Vgs: ±20V

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31+ $3.8242 $118.5502
47+ $3.7041 $174.0927
65+ $3.5851 $233.0315
84+ $3.4650 $291.0600
112+ $3.1070 $347.9840
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Availability: 2,820 pieces
MOQ: 13 pcs
Order Increment : 1 pcs
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