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IRF830ALPBF

Part No IRF830ALPBF
Manufacturer Vishay
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 500V 5A TO262-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer Vishay
Packaging Tube/Rail
Status Active
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 500V
Continuous Drain Current at 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4.5V @ 250μA
Max Gate Charge 24nC @ 10V
Max Input Capacitance 620pF @ 25V
Maximum Gate-Source Voltage ±30V
Power Dissipation (Max) 3.1W (Ta), 74W (Tc)
Maximum Rds On at Id,Vgs 1.4 Ohm @ 3A, 10V
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting Through Hole
Case / Package I2PAK
Dimension TO-262-3 Long Leads, I2Pak, TO-262AA
Win Source Part Number 069409-IRF830ALPBF
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IRF830ALPBF CAD Model

Description

The Vishay IRF830ALPBF is a N-channel MOSFET transistor.

  • Designed for: Use in applications where high power switching is required, such as in motor control and power supplies
  • Maximum Drain-Source Breakdown Voltage: 500V
  • Continuous Drain Current @ 25°C: 5A
  • Package: I2PAK
  • Maximum Operating Temperature Range: -55°C to 150°C
  • Popularity: Medium
  • Supply and Demand Status: Limited

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Pricing & Ordering

Quantity Unit Price Ext. Price
175+ $0.3361 $58.8175
420+ $0.2760 $115.9200
650+ $0.2680 $174.2000
895+ $0.2587 $231.5365
1,155+ $0.2506 $289.4430
1,550+ $0.2241 $347.3550
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 8,000 pieces
MOQ: 175 pcs
Order Increment : 1 pcs
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