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Same model may have multiple batches, images only for reference.
IPB05N03LAG Real Image
Same model may have multiple batches, images only for reference.

IPB05N03LAG

Part No IPB05N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 80A D2PAK
Datasheet
IPB05N03LAG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 50μA
Max Gate Charge 25nC @ 5V
Max Input Capacitance 3110pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 94W (Tc)
Maximum Rds On at Id,Vgs 4.6 mOhm @ 55A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068965-IPB05N03LAG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB05N03LAG CAD Model

Description

The IPB05N03LAG is an N-channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 25V
  • Continuous Drain Current: 80A @ 25°C
  • Rds On (Max) at Id, Vgs: 4.6 mOhm @ 55A and 10V
  • Gate Charge (Qg) (Max) at Vgs: 25nC @ 5V
  • Temperature Range: -55°C to 175°C (TJ)
  • Package: PG-TO263-3-2
  • Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

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Pricing & Ordering

Quantity Unit Price Ext. Price
2+ $34.1765 $68.3530
5+ $28.0422 $140.2110
7+ $27.1656 $190.1592
9+ $26.2890 $236.6010
12+ $25.4135 $304.9620
16+ $22.7847 $364.5552
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Availability: 6,000 pieces
MOQ: 2 pcs
Order Increment : 1 pcs
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