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Same model may have multiple batches, images only for reference.
IPB06N03LA Real Image
Same model may have multiple batches, images only for reference.

IPB06N03LA

Part No IPB06N03LA
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A D2PAK
Datasheet
IPB06N03LA Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 117259-IPB06N03LA
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB06N03LA CAD Model

Description

The Infineon Technologies IPB06N03LA is a N-channel MOSFET with a drain-source breakdown voltage of 25V and a continuous drain current of 50A @ 25°C.

  • Maximum Power Dissipation: 83W (Tc)
  • Maximum Rds On: 5.9 mOhm @ 30A, 10V
  • Gate-Source Threshold Voltage: 2V @ 40μA
  • Maximum Gate Charge: 22nC @ 5V
  • Maximum Input Capacitance: 2653pF @ 15V
  • Status: obsolete(EOL)
  • Operating Temperature: -55°C to 175°C (TJ)
  • Package: PG-TO263-3-2

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115+ $1.0413 $119.7495
175+ $1.0089 $176.5575
240+ $0.9764 $234.3360
310+ $0.9438 $292.5780
410+ $0.8462 $346.9420
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