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Same model may have multiple batches, images only for reference.
IPB06N03LAG Real Image
Same model may have multiple batches, images only for reference.

IPB06N03LAG

Part No IPB06N03LAG
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 25V 50A D2PAK
Datasheet
IPB06N03LAG Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 25V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 40μA
Max Gate Charge 22nC @ 5V
Max Input Capacitance 2653pF @ 15V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 83W (Tc)
Maximum Rds On at Id,Vgs 5.9 mOhm @ 30A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 068966-IPB06N03LAG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB06N03LAG CAD Model

Description

The IPB06N03LAG is an obsolete (EOL) MOSFET from Infineon Technologies that is suitable for use in a variety of applications.

  • Maximum Drain-Source Voltage: 25V
  • Continuous Drain Current: 50A
  • On-State Resistance: 5.9mOhm
  • Package: PG-TO263-3-2

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6+ $19.8048 $118.8288
10+ $19.1857 $191.8570
13+ $18.5666 $241.3658
17+ $17.9475 $305.1075
22+ $16.0915 $354.0130
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Availability: 12,600 pieces
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