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Same model may have multiple batches, images only for reference.
IPB075N04LGATMA1 Real Image
Same model may have multiple batches, images only for reference.

IPB075N04LGATMA1

Part No IPB075N04LGATMA1
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 40V 50A TO263-3
Datasheet
IPB075N04LGATMA1 Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 40V
Continuous Drain Current at 25°C 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 20μA
Max Gate Charge 36nC @ 10V
Max Input Capacitance 2800pF @ 25V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 56W (Tc)
Maximum Rds On at Id,Vgs 7.5 mOhm @ 50A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 1045767-IPB075N04LGATMA1
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian IPB075N04LGATMA1 CAD Model

Description

The Infineon Technologies 433643 is an N-Channel MOSFET designed for use in discrete semiconductor products.

  • Drain-Source Breakdown Voltage: 40V
  • Continuous Drain Current (25°C): 50A @ 25°C
  • Maximum Rds On (Id,Vgs): 7.5 mOhm @ 50A, 10V
  • Case/Package: PG-TO263-2
  • Temperature Range: -55°C to 175°C
  • Maximum Power Dissipation: 56W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Gate-Source Threshold Voltage: 2V @ 20μA
  • Maximum Gate Charge: 36nC @ 10V
  • Maximum Input Capacitance: 2800pF @ 25V
  • Lifecycle Status: Obsolete (EOL)

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