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Same model may have multiple batches, images only for reference.
IPB080N06N G Real Image
Same model may have multiple batches, images only for reference.

IPB080N06N G

Part No IPB080N06N G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO-263
Datasheet
IPB080N06N G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Reel - TR
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Gate-Source Threshold Voltage 4V @ 150μA
Max Gate Charge 93nC @ 10V
Max Input Capacitance 3500pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 214W (Tc)
Maximum Rds On at Id,Vgs 7.7 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 135909-IPB080N06N G
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian IPB080N06N G CAD Model

Description

The Infineon Technologies 135909-IPB080N06N G is an N-channel MOSFET transistor with a drain-source breakdown voltage of 60V and a continuous drain current of 80A (Tc).

  • Maximum Rds On: 7.7 mOhm @ 80A, 10V
  • Gate-Source Threshold Voltage: 4V @ 150μA
  • Package: PG-TO263-3-2
  • Power Dissipation: 214W (Tc)
  • Maximum Gate-Source Voltage: ±20V
  • Maximum Gate Charge: 93nC @ 10V
  • Suitability: suitable for use in applications that require a high voltage and current rating, such as power supplies and motor control

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Pricing & Ordering

Quantity Unit Price Ext. Price
40+ $1.5964 $63.8560
90+ $1.3099 $117.8910
140+ $1.2689 $177.6460
190+ $1.2280 $233.3200
245+ $1.1871 $290.8395
330+ $1.0642 $351.1860
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Availability: 7,700 pieces
MOQ: 40 pcs
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