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Same model may have multiple batches, images only for reference.
IPB085N06L G Real Image
Same model may have multiple batches, images only for reference.

IPB085N06L G

Part No IPB085N06L G
Manufacturer Infineon Technologies
Catalog Transistors - FETs, MOSFETs - RF
Description MOSFET N-CH 60V 80A TO-263
Datasheet
IPB085N06L G Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Infineon Technologies
Packaging Cut Reel
Status Obsolete(EOL)
Polarity N-Channel
Technology MOSFET
Drain-Source Breakdown Voltage 60V
Continuous Drain Current at 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Gate-Source Threshold Voltage 2V @ 125μA
Max Gate Charge 104nC @ 10V
Max Input Capacitance 3500pF @ 30V
Maximum Gate-Source Voltage ±20V
Power Dissipation (Max) 188W (Tc)
Maximum Rds On at Id,Vgs 8.2 mOhm @ 80A, 10V
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting SMD (SMT)
Case / Package PG-TO263-3-2
Dimension TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Win Source Part Number 120769-IPB085N06L G
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian IPB085N06L G CAD Model

Description

The Infineon Technologies IPB085N06L G is a MOSFET electronic component that is designed for use in various applications.

  • Power Dissipation: 188W (Tc)
  • Polarity: N-Channel
  • Mounting: SMD (SMT) technology
  • Maximum Drain-Source Breakdown Voltage: 60V
  • Maximum Continuous Drain Current: 80A (Tc)
  • Supply and Demand Status: balanced

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Quantity Unit Price Ext. Price
19+ $3.1086 $59.0634
46+ $2.5506 $117.3276
71+ $2.4709 $175.4339
97+ $2.3912 $231.9464
125+ $2.3115 $288.9375
168+ $2.0725 $348.1800
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Availability: 1,640 pieces
MOQ: 19 pcs
Order Increment : 1 pcs
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